With ESD ratings of ± 16 kV HBM and a higher reverse avalanche capability compared to traditional Schottky devices, the SBR family of Schottky diodes come in a PowerDI123 flat-lead package. Targeting ...
Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC Schottky diodes. Infineon Technologies AG expands the comprehensive SiC portfolio ...
Helping extend battery life in portable applications, the BAS70SL, BAS40SL, and RB751SL Schottky diodes provide a forward drop (Vf) of 0.37 mV. The diodes are housed in an ultracompact SOD923 package ...
This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...
USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
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