TL;DR: Samsung Electronics plans to launch its next-generation low-power wide I/O (LPW) DRAM, also known as low-latency wide I/O (LLW), in 2028. This "mobile HBM" memory aims to enhance on-device AI ...
Samsung Electronics Co., Ltd. today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class* process technology. The new wide I/O mobile DRAM will ...
New type of memory chip for mobile devices will dramatically increase performance in future smartphones and tablets, electronics giant said Samsung Electronics has started mass production of a new ...
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