SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...
SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing ...
SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
SemiQ Inc, a designer, developer, and supplier of silicon carbide (SiC) solutions for efficient, high-performance, and high-voltage applications, has unveiled the QSiC family of devices. The QSiC ...
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE:VSH), a $1.92 billion market cap electronic components manufacturer, has released two new 1200 V silicon carbide (SiC) MOSFET power modules designed ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...
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