Formation of defect-pairs in GaN under high-energy particle irradiation. Courtesy: S Chen Gallium nitride (GaN) is the world’s second-favourite semiconductor, present in devices ranging from ...
image: As silicon-based semiconductors reach performance limits, gallium nitride is becoming the next go-to material for several technologies. Holding GaN back, however, is its high numbers of defects ...
Osaka - Gallium nitride (GaN) is a semiconductor material whose wide band gap may one day lead to it superseding silicon in electronics applications. It is therefore important to have GaN ...
Minimising semiconductor flaws will expand China's price gap with US for advanced chips used in electronic warfare, aerospace ...
Using advanced techniques, researchers more-accurately characterized the thermal conductivity of four distinct GaN substrate types along with their defect density, and developed a formula linking the ...
Engineers have created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with applications spanning nearly all electronics products and ...
As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon ...
As silicon-based semiconductors reach performance limits, gallium nitride is becoming the next go-to material for several technologies. Holding GaN back, however, is its high numbers of defects.
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