In a study published in Journal of the American Chemical Society, a team led by Prof. Song Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

A new technical paper titled “Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy” was published by researchers at Penn State University.

(Nanowerk News) IBM scientists in Zurich and Yorktown Heights, New York have unveiled a breakthrough approach in two publications for growing and integrating nano-sized III-V semiconductor devices on ...

Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form ...

In a study published in Journal of the American Chemical Society, a team led by Prof. SONG Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

One of the many challenges for the IC developers is to change the channel material to increase transistor mobility. But what about manufacturing? Can LED-style epitaxy be migrated to high-volume ...

Remote epitaxy, a promising technology for thin film growth and exfoliation, suffers from substrate damage under harsh conditions. In this regard, researchers recently investigated the effect of ...