A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental ...

Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia.

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

Littelfuse, Inc., an industrial technology manufacturing company empowering a sustainable, connected, and safer world, announced the release of IXTY2P50PA, the first automotive-grade PolarP ™ ...

Toshiba is claiming better improved on-resistance and gate charge for its third generation of industrial 650V enhancement-mode silicon carbide mosfets. Toshiba is claiming better improved ...

Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, ...

Littelfuse and Monolith Semiconductor of Texas have added two 1200V SiC n -channel, enhancement-mode MOSFETs to their portfolio of power semiconductor devices. These new SiC MOSFETs are the latest ...

MOSFETs are essential parts for automobile electrification, as they’re used in DC-DC converters to boost the battery voltage for electric power steering (EPS), electric braking, high-voltage inverter ...

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...