TOKYO — Swiss-based Innovative Silicon Solutions (ISS) and the Swiss Federal Institute of Technology have developed a silicon-on-insulator based single-transistor DRAM cell prototype that will scale ...
As mentioned in a previous post, the Flemish Interuniversity Microelectronics Consortium, IMEC, has decided to include the interests of DRAM and non-volatile memory designers in their 32nm half-pitch ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
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