TOKYO — Swiss-based Innovative Silicon Solutions (ISS) and the Swiss Federal Institute of Technology have developed a silicon-on-insulator based single-transistor DRAM cell prototype that will scale ...

As mentioned in a previous post, the Flemish Interuniversity Microelectronics Consortium, IMEC, has decided to include the interests of DRAM and non-volatile memory designers in their 32nm half-pitch ...

On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...

One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...

Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize computer memory. Neo estimates 3D X-DRAM can achieve 128Gb density with 230 ...

For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...

NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...