Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...
DRAM manufacturers continue to demand cost-effective solutions for screening and process improvement amid growing concerns over defects and process variability, but meeting that demand is becoming ...
Tokyo – Toshiba Corp. has developed a new cell structure for embedded DRAM on silicon-on-insulator wafers that takes advantage of SOI's specific characteristics. The cell will be an essential ...
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